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ESD Basics: From Semiconductor Manufacturing to Product UseBy Steven H. Voldman
Free PDF ESD Basics: From Semiconductor Manufacturing to Product UseBy Steven H. Voldman
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Electrostatic discharge (ESD) continues to impact semiconductor manufacturing, semiconductor components and systems, as technologies scale from micro- to nano electronics. This book introduces the fundamentals of ESD, electrical overstress (EOS), electromagnetic interference (EMI), electromagnetic compatibility (EMC), and latchup, as well as provides a coherent overview of the semiconductor manufacturing environment and the final system assembly. It provides an illuminating look into the integration of ESD protection networks followed by examples in specific technologies, circuits, and chips.
The text is unique in covering semiconductor chip manufacturing issues, ESD semiconductor chip design, and system problems confronted today as well as the future of ESD phenomena and nano-technology.
Look inside for extensive coverage on:
- The fundamentals of electrostatics, triboelectric charging, and how they relate to present day manufacturing environments of micro-electronics to nano-technology
- Semiconductor manufacturing handling and auditing processing to avoid ESD failures
- ESD, EOS, EMI, EMC, and latchup semiconductor component and system level testing to demonstrate product resilience from human body model (HBM), transmission line pulse (TLP), charged device model (CDM), human metal model (HMM), cable discharge events (CDE), to system level IEC 61000-4-2 tests
- ESD on-chip design and process manufacturing practices and solutions to improve ESD semiconductor chip solutions, also practical off-chip ESD protection and system level solutions to provide more robust systems
- System level concerns in servers, laptops, disk drives, cell phones, digital cameras, hand held devices, automobiles, and space applications
- Examples of ESD design for state-of-the-art technologies, including CMOS, BiCMOS, SOI, bipolar technology, high voltage CMOS (HVCMOS), RF CMOS, smart power, magnetic recording technology, micro-machines (MEMs) to nano-structures
ESD Basics: From Semiconductor Manufacturing to Product Use complements the author’s series of books on ESD protection. For those new to the field, it is an essential reference and a useful insight into the issues that confront modern technology as we enter the Nano-electronic Era.
- Sales Rank: #2773192 in Books
- Brand: Brand: Wiley
- Published on: 2012-10-22
- Original language: English
- Number of items: 1
- Dimensions: 9.90" h x .65" w x 6.90" l, 1.10 pounds
- Binding: Hardcover
- 226 pages
Features
- Used Book in Good Condition
Review
"With 146 figures including colour blood films and haematology slides, the book provides a pleasant state-of-the-art introduc-tion to clinical haematology. There is a self-assess- ment section at the end." (Journal of Tropical Pediatrics, 1 April 2011)
From the Back Cover
Electrostatic discharge (ESD) continues to impact semiconductor manufacturing, semiconductor components and systems, as technologies scale from micro- to nano electronics. This book introduces the fundamentals of ESD, electrical overstress (EOS), electromagnetic interference (EMI), electromagnetic compatibility (EMC), and latchup, as well as provides a coherent overview of the semiconductor manufacturing environment and the final system assembly. It provides an illuminating look into the integration of ESD protection networks followed by examples in specific technologies, circuits, and chips.
The text is unique in covering semiconductor chip manufacturing issues, ESD semiconductor chip design, and system problems confronted today as well as the future of ESD phenomena and nano-technology.
Look inside for extensive coverage on:
- The fundamentals of electrostatics, triboelectric charging, and how they relate to present day manufacturing environments of micro-electronics to nano-technology
- Semiconductor manufacturing handling and auditing processing to avoid ESD failures
- ESD, EOS, EMI, EMC, and latchup semiconductor component and system level testing to demonstrate product resilience from human body model (HBM), transmission line pulse (TLP), charged device model (CDM), human metal model (HMM), cable discharge events (CDE), to system level IEC 61000-4-2 tests
- ESD on-chip design and process manufacturing practices and solutions to improve ESD semiconductor chip solutions, also practical off-chip ESD protection and system level solutions to provide more robust systems
- System level concerns in servers, laptops, disk drives, cell phones, digital cameras, hand held devices, automobiles, and space applications
- Examples of ESD design for state-of-the-art technologies, including CMOS, BiCMOS, SOI, bipolar technology, high voltage CMOS (HVCMOS), RF CMOS, smart power, magnetic recording technology, micro-machines (MEMs) to nano-structures
ESD Basics: From Semiconductor Manufacturing to Product Use complements the author’s series of books on ESD protection. For those new to the field, it is an essential reference and a useful insight into the issues that confront modern technology as we enter the Nano-electronic Era.
About the Author
Dr. Steven H. Voldman received his B. S. in Engineering Science from the University of Buffalo (1979); M.S. EE (1981) and Electrical Engineer Degree (1982) from M.I.T.; MS Engineering Physics (1986) and Ph.D. EE (1991) from the University of Vermont under IBM Resident Study Fellow program. At M.I.T., he worked as a member of the M.I.T. Plasma Fusion center, and the High Voltage Research Laboratory (HVRL). At IBM, as a reliability/device engineer, his work included pioneering work in bipolar/CMOS SRAM alpha particle and cosmic ray SER simulation, MOSFET gate-induced drain leakage (GIDL) mechanism, hot electron, epitaxy/well design, CMOS latchup, and ESD. Since 1986, he was responsible for defining the IBM ESD/latchup strategy for CMOS, SOI, BiCMOS and RF CMOS, and SiGe technologies. He has authored ESD and latchup publications in the area of MOSFET scaling, device simulation, copper, low-k, MR heads, CMOS, SOI, SiGe and SiGeC technology. Voldman served as SEMATECH ESD Working Group Chairman (1996-2000), ESD Association Technical Program Chair (2000), Vice Chairman (2001), General Chairman 2002, and ESDA Board of Directors (1998-2006), International Reliability Physics Symposium ESD/Latchup Sub-Committee Chairman (2002-2006), International Physical and Failure Analysis (IPFA) Symposium ESD Sub-Committee Chairman (2003-2005), ESD Association Standard Development Chairman on Transmission Line Pulse Testing (2000-2006), ESD International Committee on Education (ICE) Asian University Liason and "ESD on Campus" program founder, and serves in the ISQED Committee, Taiwan ESD Conference (T-ESDC) Technical Program Committee (Hsinchu, Taiwan), and the International Conference on ElectromagneticCompability (ICEMAC, Taipei, Taiwan). Voldman has provided ESD lectures for universities (e.g., M.I.T. Lecture Series, Taiwan National Chiao-Tung University (NCTU), and Singapore Nanyang Technical University (NTU)). He is a recipient of over 136 U.S. patents, over 100 publications, and recently wrote a textbook on ESD entitled ESD: Physics and Devices (John Wiley and Sons, Ltd) as well as contributing to the text "Silicon Germanium: Modeling, Technology and Simulation," and providing talks on patenting and invention. He has been highlighted in EE Times, Intellectual Property Law and Business and authored the first article on ESD phenomena for the October 2002 edition of Scientific American entitled "Lightning Rods for Nano-electronics," and Pour La Science, Le Scienze, and Swiat Nauk International editions. In 2003, Dr. Voldman was accepted as the first IEEE Fellow for ESD phenomena in semiconductors for "contributions to electrostatic discharge protection in CMOS, SOI, and SiGe technologies."
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